Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-09-12
2006-09-12
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S646000, C257S649000, C438S149000, C438S787000, C438S413000, C438S479000
Reexamination Certificate
active
07105895
ABSTRACT:
A method for producing an insulating or barrier layer (FIG.1B), useful for semiconductor devices, comprises depositing a layer of silicon and at least one additional element on a silicon substrate whereby said deposited layer is substantially free of defects such that epitaxial silicon substantially free of defects can be deposited on said deposited layer. Alternatively, a monolayer of one or more elements, preferably comprising oxygen, is absorbed on a silicon substrate. A plurality of insulating layers sandwiched between epitaxial silicon forms a barrier composite. Semiconductor devices are disclosed which comprise said barrier composite.
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Lofgren John Clay
Tsu Raphael
Wang Chia-Gee
Ladas & Parry LLP
Mandala Jr. Victor A.
Nanodynamics Inc.
Pert Evan
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