Epitaxial silicon wafers for CMOS integrated circuits

Details Epitaxial silicon wafers for CMOS integrated circuits Epitaxial silicon wafers for CMOS integrated circuits

1993-04-28

1994-04-26

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257398, H01L 2702

Patent

active

053069390

ABSTRACT:
The present invention is a CMOS epitaxial silicon wafer (50) on which CMOS integrated circuits (16) can be manufactured, including such circuits that include bipolar components (referred to as "BiCMOS" circuits). The CMOS wafer includes a lightly doped monocrystalline silicon substrate (56) having a major surface (54) that supports a lightly doped monocrystalline epitaxial silicon layer (52). The substrate includes a heavily doped diffused layer (58) extending a short distance (64) into the substrate from the major surface toward a lightly doped bulk portion (66) of the substrate. CMOS integrated circuits manufactured on the epitaxial layer of the CMOS wafer of this invention have a low susceptibility to latch-up. The low susceptibility is provided by the relatively low resistivity of the diffused layer. Since the diffused layer is relatively thin and the bulk portion is lightly doped, the oxygen content of the bulk can be readily measured and controlled.

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Sze, Semiconductor Devices . . . pp. 302-316 and pp. 492-495, 1985.
Muller et al, Device Electronics for Ic's, p. 85 1986.
Borland et al., "Advanced CMOS Epitaxial Processing for Latch-Up Hardening and Improved Epilayer Quality," 27 Solid State Technology, No. 8, Aug. 1984.
S. M. Sze, Semiconductor Devices -Physics and Technology, J. Wiley & Sons, New York 1985, pp. 472-478 and 492-495.

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