Epitaxial reactors

Details Epitaxial reactors Epitaxial reactors

1987-07-15

1989-08-22

Lawrence, Evan

Coating apparatus

Gas or vapor deposition

With treating means

118730, 219 1051, 219 1077, C23C 1646, C23C 1652

Patent

active

048585572

ABSTRACT:
A reactor for chemical vapor deposition of epitaxial layers on crystalline substrates uses a medium frequency heating system, the power for the heating being provided by a multi-turn coil, inducing electrical currents in a susceptor of electrically conductive material, such as graphite, housed in a transparent bell jar. The internal sides of the turns of the coil are optically finished to reflect back heat to the susceptor irradiated therefrom during operation. Heating is controlled by substracting or adding reactive currents from or to different turns of the coil and through properly shaping the walls of the susceptor in order to control temperature gradients therein.

REFERENCES:
patent: 3330251 (1967-07-01), Gutsche
patent: 3645230 (1972-02-01), Hugle et al.
patent: 3699298 (1972-10-01), Briody
patent: 3749383 (1973-07-01), Voigt et al.
patent: 4217856 (1980-08-01), Kraus
patent: 4284867 (1981-08-01), Hill et al.
patent: 4496828 (1985-01-01), Kusmierz et al.
patent: 4550245 (1985-10-01), Arai et al.
patent: 4579080 (1986-04-01), Martin et al.

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