Epitaxial process for III-V compound semiconductor

Details Epitaxial process for III-V compound semiconductor Epitaxial process for III-V compound semiconductor

1991-10-22

1993-11-30

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156606, 156610, 156DIG70, 437102, 437104, 437112, C30B 2514

Patent

active

052661270

ABSTRACT:
A vapor-phase epitaxial process enabling easy growth of a III-V compound semiconductor layer including a .delta.-doped layer requires essentially no change or rearrangement of the conventional vapor-phase epitaxial reactor system but only a simple change in the method of controlling the system. The epitaxial process includes the step of feeding an epitaxial growth gas into a reactor vessel containing a III group element as a raw material and an epitaxial substrate made of a semiconductor to epitaxially grow a layer made of a III-V compound semiconductor on the substrate by the chloride CVD process. The epitaxial process also includes the steps of displacing the gas in the reactor vessel with an inert gas, feeding an epitaxial growth gas consisting of a chloride of a V group element and a carrier gas to grow a buffer layer on the substrate, interrupting the epitaxial growth gas feeding step, feeding only the carrier gas to a boat for raw material in the reactor vessel for causing a melt of the III group element to appear on the surface of a melt in the boat, and feeding the epitaxial growth gas to the substrate to grow a semiconductor layer doped by an impurity in a .delta.-function deposition profile.

REFERENCES:
patent: 3901746 (1975-08-01), Boucher
patent: 4007074 (1977-02-01), Ogirima et al.
patent: 4507169 (1985-03-01), Nogami
patent: 4645689 (1987-02-01), Cox
patent: 4801557 (1989-01-01), Wessels et al.
Jain et al, "Vapour phase Epitaxial Growth of GaAs", Progress in Crystal Growth and Characterizations, vol. 9, No. 1 (1984) pp. 75, 86 and 87.

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