Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1986-04-15
1987-08-18
Pal, Asok
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156610, 156614, 156DIG64, 156DIG75, 156DIG87, 156DIG95, 156DIG101, 156DIG102, 156DIG106, 437178, H01L 2166
Patent
active
046875379
ABSTRACT:
A process of forming an epitaxial metal silicide layer on a silicon substrate is disclosed. A thin layer of a first metal that will form an oxide in preference to silicon is initially deposited on the substrate. A preferred first metal is titanium. A layer of palladium, platinum or iridium is deposited thereover. An exceptionally uniform, conductive layer of metal silicide is thereby formed by epitaxial growth without the necessity of a high temperature anneal. The disclosed process is particularly useful in forming ultra thin metal silicide Schottky barriers in devices such as infrared imaging arrays.
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Kosonocky et al. 1978 International Conf. on Applications of Charge-Coupled Devices, Oct., 1978, 12 pages.
Hoffman Dorothy M.
McGinn Joseph T.
Tams, III Frederick J.
Pal Asok
RCA Corporation
Swope R. Hain
Tripoli Joseph S.
Trygg James M.
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