Metal treatment – Barrier layer stock material – p-n type – With contiguous layers of different semiconductive material
Patent
1994-09-08
1996-06-25
Breneman, R. Bruce
Metal treatment
Barrier layer stock material, p-n type
With contiguous layers of different semiconductive material
148 335, 437105, 437108, 437132, H01L 2906
Patent
active
055296408
ABSTRACT:
In one form of the invention, a method for the growth of an epitaxial insulator-metal structure on a semiconductor surface comprising the steps of maintaining the semiconductor surface at a pressure below approximately 1.times.10.sup.-7 mbar, maintaining the semiconductor surface at a substantially fixed first temperature between approximately 25.degree. C. and 400.degree. C., depositing an epitaxial metal layer on the semiconductor surface, adjusting the semiconductor surface to a substantially fixed second temperature between approximately 25.degree. C. and 200.degree. C., starting a deposition of epitaxial CaF.sub.2 on the first metal layer, ramping the second temperature to a third substantially fixed temperature between 200.degree. C. and 500.degree. C. over a time period, maintaining the third temperature until the epitaxial CaF.sub.2 has deposited to a desired thickness, and stopping the deposition of epitaxial CaF.sub.2 on the first metal layer.
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Breneman R. Bruce
Donaldson Richard L.
Kesterson James C.
Rao Ramamohan
Skrehot Michael K.
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