Epitaxial material used for GaN based LED with low...

Details Epitaxial material used for GaN based LED with low... Epitaxial material used for GaN based LED with low...

2007-08-15

2011-10-25

Ahmadi, Mohsen (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S028000, C438S029000, C438S069000, C438S481000, C438S956000, C257SE21108, C257SE21117, C257SE21126, C257SE21405

Reexamination Certificate

active

08043872

ABSTRACT:
A method of manufacturing epitaxial material used for GaN based LED with low polarization effect, which includes steps of growing n-type InGaAlN layer composed of GaN buffer layer (2) and n-type GaN layer (3), low polarizing active layer composed of InGaAlN multi-quantum well structure polarized regulating and controlling layer (4) and InGaAlN multi-quantum well structure light emitting layer (5) and p-type InGaAlN layer (6) on sapphire or SiC substrate (1) in turn. The method adds InGaAlN multi-quantum well structure polarized regulating and controlling layer, thus reduces polarization effect of quantum well active region.

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