Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1975-03-25
1976-06-01
Ozaki, G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148172, 252 623GA, 252 623ZT, H01L 738
Patent
active
039606180
ABSTRACT:
In an epitaxial growth process for compound semiconductor crystals in a liquid phase, a substrate crystal is brought into contact with an etching solution containing as solute a predetermined amount of at least one constituent of the substrate crystal, which is smaller than that of a saturated solution, after heating them at a temperature for crystal growth. The substrate crystal is kept in contact with the solution during a period of time sufficient to remove a surface portion of the substrate crystal. Then the substrate crystal is brought into contact with a solution for crystal growth containing a substance to be grown as solute and a crystal of the substance is grown epitaxially on an exposed clean surface of the substrate crystal.
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patent: 3697336 (1972-10-01), Lamorte
Ishioka Sachio
Ito Kazuhiro
Kawamura Masao
Kurata Kazuhiro
Morioka Makoto
Hitachi , Ltd.
Ozaki G.
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