Epitaxial growth process and growing apparatus

Details Epitaxial growth process and growing apparatus Epitaxial growth process and growing apparatus

1989-11-09

1992-06-09

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156612, 156613, 156614, 148DIG17, 437 19, 437939, 437963, C30B 2518

Patent

active

051203944

ABSTRACT:
A process of epitaxially growing a semiconductor Si, Ge or SiGe single crystal layer on a semiconductor (Si or Ge) single crystal substrate, comprising the steps of: allowing a raw material gas (e.g., Si.sub.2 H.sub.6, GeH.sub.4) for the layer and a fluoride gas (e.g., Si.sub.2 F.sub.6, GeF.sub.4, BF) of at least one element selected from the group consisting of the semiconductor element of the layer and a dopant for the layer to simultaneously flow over the substrate; and applying an ultraviolet light to the substrate to decompose the gases by an ultraviolet light excitation reaction to deposit the layer on the surface of the substrate heated at a temperature of from 250.degree. to 400.degree. C.
Prior to the epitaxial growth of the semiconductor layer, the substrate is cleaned by allowing the fluoride gas to flow over the substrate having a temperature of from a room temperature to 500.degree. C., and by irradiating an ultraviolet light to the substrate to remove a natural oxide layer from the substrate surface.

REFERENCES:
patent: 4605479 (1986-08-01), Faith, Jr.
patent: 4649059 (1987-03-01), Eden et al.
patent: 4723508 (1988-02-01), Yamazaki et al.
patent: 4786352 (1988-11-01), Benzing
patent: 4800173 (1989-01-01), Kanai et al.
patent: 4843030 (1989-06-01), Eden et al.
patent: 4942058 (1990-07-01), Sano
"Photochemical Vapor Deposition of Single-Crystal Silicon at a Very Low Temperature of 200.degree. C.", Yamada et al., Extended Abstracts of the 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 217-220.
"Photochemical Effects for Low-Temperature Si Epitaxy", T. Yamazaki et al., Extended Abstracts of the 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 213-216.
"Thin Film Formation by Radical Jet Generated by UV Laser-Induced Multi-Photon Dissociation", Y. Ichikawa et al., Extended Abstracts of the 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 221-224.

Affiliated with

Also associated with

Rating

Epitaxial growth process and growing apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Epitaxial growth process and growing apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Epitaxial growth process and growing apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1802198