Epitaxial growth method

Details Epitaxial growth method Epitaxial growth method

2006-01-05

2008-08-05

Nguyen, Ha (Department: 2829)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

C438S481000, C257SE21097, C257SE21117, C257SE29071

Reexamination Certificate

active

07407865

ABSTRACT:
An epitaxial growth method for forming a high-quality epitaxial growth semiconductor wafer is provided. The method includes forming a single crystalline layer on a single crystalline wafer; forming a mask layer having nano-sized dots on the single crystalline layer; forming a porous buffer layer having nano-sized pores by etching the mask layer and the surface of the single crystalline layer; annealing the porous buffer layer; and forming an epitaxial material layer on the porous buffer layer using an epitaxial growth process.

REFERENCES:
patent: 6495852 (2002-12-01), Mouri
patent: 6579359 (2003-06-01), Mynbaeva et al.
patent: 6756292 (2004-06-01), Lee et al.
patent: 2005/0051766 (2005-03-01), Stokes et al.

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