Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2006-01-18
2008-10-14
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S481000, C257SE21090
Reexamination Certificate
active
07435666
ABSTRACT:
Provided is an epitaxial growth method for forming a high-quality crystalline growth semiconductor wafer. The method includes forming a buffer layer on a single crystalline wafer using a single crystalline material; forming a mask layer on the buffer layer; forming a plurality of holes in the mask layer using a laser to expose portions of the buffer layer; forming wells having a predetermined depth in the exposed portions of the buffer layer by injecting an etchant into the holes; removing the mask layer and annealing the buffer layer to form a porous buffer layer having cavities obtained by the wells; and forming a crystalline material layer on the porous buffer layer using an epitaxial growth process.
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Korean Office Action (with English translation) dated Mar. 29, 2006.
Geyer Scott B.
McDermott Will & Emery LLP
Nikmanesh Seahvosh J
Samsung Corning Co., Ltd.
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