Coating apparatus – Gas or vapor deposition – Work support
Reexamination Certificate
2005-03-08
2005-03-08
Hassanzadeh, Parviz (Department: 1763)
Coating apparatus
Gas or vapor deposition
Work support
C118S728000, C118S729000, C118S503000, C156S345510, C156S345540, C156S345550, C414S935000, C414S941000
Reexamination Certificate
active
06863735
ABSTRACT:
An epitaxial growth furnace is provided for effecting the formation of an epitaxial layer on the surface of a semiconductor wafer by CVD in a reaction chamber of the furnace. The furnace comprises a wafer holder having an opening for exposing a surface area of the wafer which is subject to epitaxial growth, an opening flange adapted for engagement with a chamfered tapered face of a whole peripheral edge of the wafer on the side of said surface area thereof, and a plurality of jaws for detachably engaging with an outer periphery of the wafer on a back surface side of said surface area.
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Gima Shintoshi
Imai Masato
Inoue Kazutoshi
Mayusumi Masanori
Nakahara Shinji
Moore Karla
Super Silicon Crystal Research Institute Corp.
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