Epitaxial deposition process for producing an electrostatic indu

Details Epitaxial deposition process for producing an electrostatic indu Epitaxial deposition process for producing an electrostatic indu

1977-01-18

1979-10-23

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29571, 29590, 148187, 357 20, 357 21, 357 22, 357 38, 357 56, 357 58, 357 88, H01L 2120, H01L 2122

Patent

active

041719956

ABSTRACT:
A process of manufacturing a static induction thyristor comprising providing a semiconductor substrate of the first conductivity type which defines a first semiconductor layer and forming a second semiconductor layer thereon of a second conductivity type. The first and second semiconductor layers have relative impurity concentrations effective for forming therebetween charge depletion regions when no electrical signal is applied to the second semiconductor layer and which prevent injection of charge carriers through the second semiconductor layer when the thyristor is in a blocking state, and such that electrically forward biasing the second semiconductor layer effectuates a sufficient reduction of the depletion regions that a sufficient quantity of charge carriers may be injected through the second semiconductor layer that the thryistor switches to a conductive state. The second semiconductor layer defines the gate region of the thyristor.

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"Epitaxial Deposition of Si and Ge" RCA Review, Dec. 1963, pp. 528-533.

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