Coating apparatus – Gas or vapor deposition – With treating means
Patent
1995-09-22
1998-01-27
Breneman, R. Bruce
Coating apparatus
Gas or vapor deposition
With treating means
118715, 118719, 118726, C23C 1600
Patent
active
057118132
ABSTRACT:
An epitaxial growth apparatus includes a substrate heating member, a growth chamber, a molecular beam source, a nozzle for ejecting a gaseous source material, an exhaust pipe, and a vacuum chamber. When a gate valve is opened between the vacuum chamber and the growth chamber, gas is exhausted from the growth chamber, and the pressure in the growth chamber is rapidly reduced. The transition from a state where the degree of vacuum is low to a state where the degree of vacuum is high is performed rapidly. Therefore, one crystalline growth apparatus is sufficient for freely selecting among growth modes to achieve desired thickness and controllability of the carrier concentration in an epitaxially grown layer. One mode requires selectivity and another mode suppresses dopant concentration for epitaxial growth of layers of an optical device or of a microwave device.
REFERENCES:
patent: 153296 (1874-07-01), Atkinson
patent: 3980044 (1976-09-01), Zollinger
patent: 4403474 (1983-09-01), Ruthven
patent: 4776166 (1988-10-01), Dixon
patent: 4805555 (1989-02-01), Itoh
patent: 4824518 (1989-04-01), Hayakawa et al.
patent: 5007372 (1991-04-01), Hattori et al.
patent: 5094596 (1992-03-01), Erwin et al.
patent: 5199994 (1993-04-01), Aoki
patent: 5350453 (1994-09-01), Schlosser
patent: 5421890 (1995-06-01), Kita et al.
patent: 5423914 (1995-06-01), Nakamura et al.
patent: 5476811 (1995-12-01), Fujii et al.
patent: 5556472 (1996-09-01), Nakamura et al.
patent: 5607511 (1997-03-01), Meyerson
patent: 5622918 (1997-04-01), Nakamura
Tsang, "From Chemical Vapor Epitaxy to Chemical Beam Epitaxy", Journal of Crystal Growth, vol. 95, 1989, pp. 121-123.
Petroff et al., "Band Gap Modulation In Two Dimensions By MBE Growth of Tiltled Superlattices and Applications to Quantum Confinement Structures", Journal of Crystal Growth, vol. 95, 1989, pp. 260 and 263.
Tsang, "Chemical Beam Epitaxy of Ga.sub.0.47 In.sub.0.53 As/InP Quantum Wells and Heterostructure Devices", Journal of Crystal Growth, vol. 81, 1987, pp. 261-263.
Kadoiwa Kaoru
Sonoda Takuji
Breneman R. Bruce
Lund Jeffrie R.
Mitsubishi Denki & Kabushiki Kaisha
LandOfFree
Epitaxial crystal growth apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Epitaxial crystal growth apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Epitaxial crystal growth apparatus will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-338758