Epitaxial crystal fabrication of SiC:AlN

Details Epitaxial crystal fabrication of SiC:AlN Epitaxial crystal fabrication of SiC:AlN

1981-06-30

1983-05-10

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG61, C30B 2502

Patent

active

043828370

ABSTRACT:
Crystals of silicon carbide and aluminum nitride, substrates containing same, and the fabrication thereof.

REFERENCES:
patent: 3470107 (1969-09-01), Addamiano
patent: 3634149 (1972-01-01), Knippenberg et al.
patent: 4013503 (1977-03-01), Knippenberg et al.
patent: 4147572 (1979-04-01), Vodakov et al.
patent: 4152182 (1979-05-01), Rutz
patent: 4172754 (1979-10-01), Dryburgh
Huture, v275, 10/78, pp. 434-435.

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