Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2007-02-27
2007-02-27
Mondt, Johannes (Department: 3663)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C257S197000, C257S198000, C257S616000
Reexamination Certificate
active
10775514
ABSTRACT:
A method and apparatus for depositing single crystal, epitaxial films of silicon carbon and silicon germanium carbon on a plurality of substrates in a hot wall, isothermal UHV-CVD system is described. In particular, a multiple wafer low temperature growth technique in the range from 350° C. to 750° C. is described for incorporating carbon epitaxially in Si and SiGe films with very abrupt and well defined junctions, but without any associated oxygen background contamination. Preferably, these epitakial SiC and SiGeC films are in-situ doped p- or n-type and with the presence of low concentration of carbon <1020cm−3, the as-grown p- or n-type dopant profile can withstand furnace anneals to temperatures of 850° C. and rapid thermal anneal temperatures to 1000° C.
REFERENCES:
patent: 5061972 (1991-10-01), Edmond
patent: 5225371 (1993-07-01), Sexton et al.
patent: 5296258 (1994-03-01), Tay et al.
patent: 5683934 (1997-11-01), Candelaria et al.
patent: 5906680 (1999-05-01), Meyerson
patent: 6049098 (2000-04-01), Sato
patent: 6114745 (2000-09-01), Fang et al.
patent: 6137120 (2000-10-01), Shindo et al.
patent: 6190975 (2001-02-01), Kubo et al.
patent: 6306211 (2001-10-01), Takahashi et al.
patent: 6552375 (2003-04-01), Swanson et al.
patent: 2002/0016085 (2002-02-01), Huang et al.
patent: 2002/0094658 (2002-07-01), Swanson et al.
patent: 2002/0160605 (2002-10-01), Kanazawa et al.
E. Kasper, et al. “Growth of 100 Ghz SiGe-Heterobiploar Transistor (HBT) Structures,” Jpn J App Phys, vol. 33 Pt. 1, No. 4B, Apr. 1994, pp. 2415-2418.
H.J. Osten et al. in the paper entitled “Carbon Doped SiGe Heterojunction Bipolar Transistors for High Frequency Application,” IEEE BCTM 7.1, 1999, pp. 109-116.
Chu Jack Oon
Grill Alfred
Jagannathan Basanth
Meyerson Bernard Steele
Ott John Albrecht
International Business Machines - Corporation
Mondt Johannes
Scully , Scott, Murphy & Presser, P.C.
Trepp, Esq. Robert M.
LandOfFree
Epitaxial and polycrystalline growth of Si 1-x-y Ge x C y... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Epitaxial and polycrystalline growth of Si 1-x-y Ge x C y..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Epitaxial and polycrystalline growth of Si 1-x-y Ge x C y... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3888527