EPIR device and semiconductor devices utilizing the same

Details EPIR device and semiconductor devices utilizing the same EPIR device and semiconductor devices utilizing the same

2006-04-11

2006-04-11

Eckert, George (Department: 2814)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S050000, C365S145000, C365S157000, C365S171000, C257S295000, C257S296000, C257S297000, C257S298000, C257S299000, C257S300000, C438S003000

Reexamination Certificate

active

07027322

ABSTRACT:
There is provided an EPIR device which is excellent in mass productivity and high in practical utility.The EPIR device includes a lower electrode layer, a CMR thin film layer and an upper electrode layer which are laminated in this order on any of various substrates. A Pt polycrystal thin film10forming the lower electrode layer includes columnar Pt crystal grains10A,10B,10C, . . . and over 90% of these crystal grains is oriented to a (1 1 1) face. Columnar PCMO crystal grain groups20A,20B,20C, . . . are respectively locally grown epitaxially on the respective outermost surfaces of the Pt crystal grains10A,10B,10C, . . . . Then, the crystal faces of the crystal grains included in the PCMO crystal grain groups20A,20B,20C, . . . and vertical in the substrate surface normal direction are any one of (1 0 0)p, (1 1 0)pand (1 1 1)pplanes.

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