Environmentally robust passivation structures for...

Details Environmentally robust passivation structures for... Environmentally robust passivation structures for...

2006-01-10

2009-10-06

Pizarro, Marcos D. (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S076000, C257SE21055

Reexamination Certificate

active

07598576

ABSTRACT:
An improved termination structure for high field semiconductor devices in silicon carbide is disclosed. The termination structure includes a silicon carbide-based device for high-field operation, an active region in the device, an edge termination passivation for the active region, in which the edge termination passivation includes, an oxide layer on at least some of the silicon carbide portions of the device for satisfying surface states and lowering interface density, a non-stoichiometric layer of silicon nitride on the oxide layer for avoiding the incorporation of hydrogen and for reducing parasitic capacitance and minimizing trapping, and, a stoichiometric layer of silicon nitride on the nonstoichiometric layer for encapsulating the nonstoichiometric layer and the oxide layer.

REFERENCES:
patent: 3982267 (1976-09-01), Henry
patent: 5332697 (1994-07-01), Smith et al.
patent: 5430324 (1995-07-01), Bencuya
patent: 5605852 (1997-02-01), Bencuya
patent: 5972801 (1999-10-01), Lipkin et al.
patent: 6246076 (2001-06-01), Lipkin et al.
patent: 6396090 (2002-05-01), Hsu et al.
patent: 6426542 (2002-07-01), Tan
patent: 6429518 (2002-08-01), Endo
patent: 6437371 (2002-08-01), Lipkin et al.
patent: 6528373 (2003-03-01), Lipkin et al.
patent: 6586781 (2003-07-01), Wu et al.
patent: 6610366 (2003-08-01), Lipkin
patent: 6673662 (2004-01-01), Singh
patent: 6767843 (2004-07-01), Lipkin et al.
patent: 6797586 (2004-09-01), Dev
patent: 6825501 (2004-11-01), Edmond et al.
patent: 2001/0028100 (2001-10-01), Schmitz et al.
patent: 2003/0025121 (2003-02-01), Edmond et al.
patent: 2003/0160274 (2003-08-01), Das et al.
patent: 2003/0201453 (2003-10-01), Edmond
patent: 2004/0099888 (2004-05-01), Sriram
patent: 2004/0099928 (2004-05-01), Nunan et al.
patent: 2004/0159865 (2004-08-01), Allen et al.
patent: 2005/0097941 (2005-05-01), Sandvik et al.
patent: 2005/0170574 (2005-08-01), Sheppard et al.
patent: 2005/0258431 (2005-11-01), Smith et al.
patent: 2006/0006415 (2006-01-01), Wu et al.
patent: 2006/0043379 (2006-03-01), Zhang et al.
patent: 2006/0043437 (2006-03-01), Mouli
patent: 2006/0118892 (2006-06-01), Wu et al.
patent: 2006/0145190 (2006-07-01), Salzman et al.
patent: 2006/0157733 (2006-07-01), Lucovsky et al.
patent: 2007/0001174 (2007-01-01), Ring et al.
patent: 1 149 934 (2001-10-01), None
patent: WO 2005076365 (2005-08-01), None
Lipkin et al., Improved Oxidation Procedures for Reduced SiO2/SiC Defects; Journal of Electronic Materials; vol. 25, No. 5, 1996, pp. 909-915.
G.Y. Chung et al., Effect of Nitric Oxide Annealing on the Inteface Trap Densities Near the Band Edges in the 4H Polytype of Silicon Carbide; Applied Physics Letters, vol. 76, No. 13, Mar. 2000, pp. 1713-1715.
H.F. Ll et al., Improving SiO2 Grown on P-Type 4H-SiC by NO Annealing; Materials Science Forum; vols. 264-268, 1998, pp. 869-872, 1998 Trans Tech Publications, Switzerland.
Lipkin et al., N2O Processing Improves the 4H-SiC:SiO2 Interface; Materials Science Forum; vols. 389-393, 2002, pp. 985-988, 2002 Trans Tech Publications, Switzerland.
J.J. Ganem et al, “NRA and XPS characterizations of layers formed by rapid thermal nitridation of thin SiO2 films,” Nuclear instruments and Methods in Physics Research, vol. 1364, No. 1-4, 1992, Elsevier Science Publishers, Amsterdam, NL, pp. 744-749.
International Search Report for PCT/US2006/048817, Authorized Officer Pierre Favre, Date of Mailing: Jun. 25, 2007; 3 pgs.
Ohno Y et al: “Effect of surface passivation on breakdown of AlGaN/Gan HEMTs,” Compound Semiconductors, 2003, International Symposium, Aug. 25-27, 2003, Piscataway, NJ, pp. 169-170.

Affiliated with

Also associated with

Rating

Environmentally robust passivation structures for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Environmentally robust passivation structures for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Environmentally robust passivation structures for... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4100414