Enhancing structural integrity of low-k dielectrics in...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C216S088000, C216S089000, C257SE21304, C257SE21583, C438S701000

Reexamination Certificate

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08030209

ABSTRACT:
During the formation of metallization layers of sophisticated semiconductor devices, the damaging of sensitive dielectric materials, such as ULK materials, may be significantly reduced during a CMP process by applying a compressive stress level. This may be accomplished, in some illustrative embodiments, by forming a compressively stressed cap layer on the ULK material, thereby suppressing the propagation of micro cracks into the ULK material.

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Translation of Official Communication from German Patent Office for German Patent Application No. 10 2008 045 035.9 dated May 20, 2009.

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