Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2009-07-22
2011-10-04
Everhart, Caridad (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C216S088000, C216S089000, C257SE21304, C257SE21583, C438S701000
Reexamination Certificate
active
08030209
ABSTRACT:
During the formation of metallization layers of sophisticated semiconductor devices, the damaging of sensitive dielectric materials, such as ULK materials, may be significantly reduced during a CMP process by applying a compressive stress level. This may be accomplished, in some illustrative embodiments, by forming a compressively stressed cap layer on the ULK material, thereby suppressing the propagation of micro cracks into the ULK material.
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Translation of Official Communication from German Patent Office for German Patent Application No. 10 2008 045 035.9 dated May 20, 2009.
Feustel Frank
Frohberg Kai
Werner Thomas
Everhart Caridad
GLOBALFOUNDDRIES Inc.
Williams Morgan & Amerson P.C.
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