Enhancing Schottky breakdown voltage (BV) without affecting...

Details Enhancing Schottky breakdown voltage (BV) without affecting... Enhancing Schottky breakdown voltage (BV) without affecting...

2006-04-29

2008-10-14

Tran, Thien F (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C438S212000

Reexamination Certificate

active

07436022

ABSTRACT:
This invention discloses a semiconductor power device that includes an active cell area having a plurality of power transistor cells and a junction barrier Schottky (JBS) area. The semiconductor power device includes the JBS area that further includes a plurality of Schottky diodes each having a PN junction disposed on an epitaxial layer near a top surface of a semiconductor substrate wherein the PN junction further includes a counter dopant region disposed in the epitaxial layer for reducing a sudden reversal of dopant profile near the PN junction for preventing an early breakdown in the PN junction.

REFERENCES:
patent: 4134123 (1979-01-01), Shannon

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