Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-05-31
2011-05-31
Malsawma, Lex (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S476000, C257SE27040, C257SE29013
Reexamination Certificate
active
07952139
ABSTRACT:
This invention discloses a semiconductor power device that includes an active cell area having a plurality of power transistor cells. Each of said power transistor cells has a planar Schottky diode that includes a Schottky junction barrier metal covering areas above gaps between separated body regions between two adjacent power transistor cells. The separated body regions further provide a function of adjusting a leakage current of said Schottky diode in each of said power transistor cells. Each of the planar Schottky diodes further includes a Shannon implant region disposed in a gap between the separated body regions of two adjacent power transistor cells for further adjusting a leakage current of said Schottky diode. Each of the power transistor cells further includes heavy body doped regions in the separated body regions next to source regions surrounding said Schottky diode forming a junction barrier Schottky (JBS) pocket region.
REFERENCES:
patent: 4063964 (1977-12-01), Peressini et al.
patent: 4646115 (1987-02-01), Shannon et al.
patent: 6921957 (2005-07-01), Zeng et al.
patent: 2004/0178444 (2004-09-01), Blanchard
Bhalla Anup
Ho Moses
Wang Xiaobin
Alpha & Omega Semiconductor Ltd.
Lin Bo-In
Malsawma Lex
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