Enhancing read and write sense margins in a resistive sense...

Details Enhancing read and write sense margins in a resistive sense... Enhancing read and write sense margins in a resistive sense...

2009-04-17

2010-12-14

Mai, Son L (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S100000, C365S158000, C365S171000

Reexamination Certificate

active

07852660

ABSTRACT:
An apparatus and method for enhancing read and write sense margin in a memory cell having a resistive sense element (RSE), such as but not limited to a resistive random access memory (RRAM) element or a spin-torque transfer random access memory (STRAM) element. The RSE has a hard programming direction and an easy programming direction. A write current is applied in either the hard programming direction or the easy programming direction to set the RSE to a selected programmed state. A read circuit subsequently passes a read sense current through the cell in the hard programming direction to sense the selected programmed state of the cell.

REFERENCES:
patent: 6005800 (1999-12-01), Koch et al.
patent: 7068531 (2006-06-01), Katti
patent: 7764537 (2010-07-01), Jung et al.
patent: 2008/0061388 (2008-03-01), Diao et al.
patent: 2010/0034009 (2010-02-01), Lu et al.
J. C. Slonczewski, “Currents, torques, and polarization factors in magnetic tunnel junctions,” Physical Review B 71, 2005, pp. 1-10, The American Physical Society, US.
J. Z. Sun, “Spin-current interaction with a monodomain magnetic body: A model study,” Physical Review B, 2000, pp. 570-578, vol. 62, No. 1, The American Physical Society, US.

Affiliated with

Also associated with

Rating

Enhancing read and write sense margins in a resistive sense... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Enhancing read and write sense margins in a resistive sense..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Enhancing read and write sense margins in a resistive sense... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4189205