Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-10-16
2000-02-29
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257339, 257356, H01L 2910, H01L 2978, H01L 2968
Patent
active
060312653
ABSTRACT:
This invention discloses a vertical DMOS power device formed in a semiconductor substrate with a top surface and a bottom surface. The power device includes a core cell area and a gate runner area. The power device includes a plurality of vertical DMOS transistor cells disposed in the core cell area wherein each transistor cell includes a drain of a first conductivity type disposed at the bottom surface of the substrate. Each of the DMOS transistor cells further includes a trench surrounding the cell having a polysilicon disposed in the trench defining a gate for the transistor cell. Each of the transistor cells further includes a source region of the first conductivity type disposed in the substrate near the gate. Each of the transistor cells further includes a body region of a second conductivity type disposed in the substrate between the gate wherein the body region defining a vertical current channel along the trench between the source and the drain. The power device further includes a plurality of trenched polysilicon fingers extended from the trenched gate to the gate runner area. The power device further includes a plurality of ruggedness enhancing body dopant regions of the second conductivity type disposed in the substrate between the trenched polysilicon fingers and in a termination, each of the ruggedness enhancing body dopant regions further includes a breakdown-inducing-regions disposed at bottom of the body dopant region at a depth below the trenched gate-extension fingers having a higher dopant concentration of the second conductivity type for inducing a breakdown therein. In a preferred embodiment, each of the vertical DMOS further includes a deep high concentration dopant region disposed in the body region below the source having a higher dopant concentration than the body region.
REFERENCES:
patent: 5072266 (1991-12-01), Bulucea et al.
patent: 5558313 (1996-09-01), Hshieh et al.
patent: 5814858 (1998-09-01), Williams
patent: 5818084 (1998-10-01), Williams et al.
Lin Bo-In
MagePower Semiconductor Corp.
Monin, Jr. Donald L.
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