Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of... – Ionized irradiation
Reexamination Certificate
2006-07-04
2006-07-04
Parekh, Nitin (Department: 2811)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
Ionized irradiation
C438S778000, C438S788000, C438S964000, C257S760000
Reexamination Certificate
active
07071129
ABSTRACT:
Adhesion between silicon nitride etch-stop layers and carbon doped oxide films may be improved by using plasma argon densification treatments of the carbon doped oxide films. The resulting surface layer of the carbon doped oxide films may be carbon-depleted and may include a relatively rough interface to improve the adhesion of deposited silicon nitride films.
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Jan Chia-Hong
Schafer Adam
Scherban Tracey
Schroeder Brett Robert
Zhou Ying
Intel Corporation
Parekh Nitin
Trop Pruner & Hu P.C.
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