Enhancement-type semiconductor having reduced leakage current

Details Enhancement-type semiconductor having reduced leakage current Enhancement-type semiconductor having reduced leakage current

1995-11-24

1997-10-07

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257348, 257349, 257383, 257388, 257413, H01L 2976, H01L 2701

Patent

active

056751672

ABSTRACT:
A semiconductor device having an enhancement-type MOS structure which can prevent large leakage current is disclosed. A high-concentration region for threshold-value regulation use formed in a channel region below a gate electrode in an enhancement-type transistor is caused to be contiguous with a source region and not contiguous with a drain region. Herein, the distance between the high-concentration region and the drain region is set so as to preclude the depletion layer extending from the drain region side from reaching the high-concentration region. Therefore, the electrical field in the depletion layer does not become the critical field which causes avalanche or Zener breakdown, and so leakage current can be caused to be reduced.

REFERENCES:
patent: 4769686 (1988-09-01), Horiuchi et al.
patent: 4914492 (1990-04-01), Matsumoto
patent: 5045916 (1991-09-01), Vor et al.
patent: 5194749 (1993-03-01), Meguro et al.
patent: 5334870 (1994-08-01), Katada et al.
patent: 5444282 (1995-08-01), Yamaguchi et al.
patent: 5486487 (1996-01-01), Ginami et al.

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