Enhancement of P-type metal-oxide-semiconductor field effect...

Details Enhancement of P-type metal-oxide-semiconductor field effect... Enhancement of P-type metal-oxide-semiconductor field effect...

2005-07-12

2005-07-12

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C257S192000

Reexamination Certificate

active

06916727

ABSTRACT:
A structure includes a tensile strained layer disposed over a substrate, the tensile strained layer having a first thickness. A compressed layer is disposed between the tensile strained layer and the substrate, the compressed layer having a second thickness. The first and second thicknesses are selected to define a first carrier mobility in the tensile strained layer and a second carrier mobility in the compressed layer.

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