Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-06-03
1997-05-27
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257339, 257409, 257496, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
056335210
ABSTRACT:
The present invention provides a MOSFET semiconductor device having a higher breakdown voltage. The MOSFET semiconductor device includes a p-type substrate having an n-type drain region, an n.sup.- -type drain region located adjacent to the n-type drain region, an n.sup.+ -type drain layer located within the n-type drain region and at a surface of the p-type substrate, a p-type top layer located adjacent to the n.sup.- -type drain region and at a surface of the p-type substrate, an n.sup.+ -type source region and a p.sup.+ -type back gate, and a layout pattern constituted of the above mentioned regions and layers includes straight portions and curved portions. The MOSFET semiconductor device is characterized by that the n-type drain region is formed so that the n-type drain region overlaps the p-type top layer in the straight portions of the layout pattern and does not overlap the p-type top layer in the curved portions of the layout pattern.
REFERENCES:
patent: 3845495 (1974-10-01), Cauge et al.
patent: 5258636 (1993-11-01), Rumennik et al.
Meier Stephen
NEC Corporation
Soward Ida M.
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