Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-05-31
2011-05-31
Nguyen, Kimberly D (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S192000
Reexamination Certificate
active
07952150
ABSTRACT:
The present invention relates to providing an enhancement-mode (e-mode) Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) with a complementary depletion-mode (d-mode) FET on a common group III-V substrate. The depletion mode FET may be another MOSFET, a MEtal-Semiconductor FET (MESFET), a High Electron Mobility Transistor (HEMT), or like FET structure. In particular, the e-mode MOSFET includes a gate structure that resides between source and drain structures on a transistor body. The gate structure includes a gate contact that is separated from the transistor body by a gate oxide. The gate oxide is an oxidized material that includes Indium and Phosphorus. The gate oxide is formed beneath the gate contact.
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Nguyen Kimberly D
RF Micro Devices, Inc.
Tran Tony
Withrow & Terranova, P.L.L.C.
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