Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Reexamination Certificate
2006-09-15
2010-12-14
McDonald, Rodney G (Department: 1724)
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
C204S298070, C204S298140
Reexamination Certificate
active
07850828
ABSTRACT:
The apparatus and method involve using a gas manifold for introducing gas into a deposition chamber. Certain embodiments involve using a binary manifold for uniform distribution of the gas with good response time. During sputtering operations, provision of an anode using the gas manifold enables such anode to be entirely protected from sputtered dielectric material during the deposition process. As such, conduction paths are initially established and maintained between electrons within the chamber and the anode. This results in improved maintenance of stable plasma and consistent coating in the deposition chamber. The conduction paths are enhanced in comparison to conventional systems due to increased collisions between the electrons and gas flowing out of the manifold outlets. Also, ionization of the gas flowing from the manifold outlets is enhanced, resulting in enhanced deposition output from the system. A magnet can also be located within the manifold so as to further increase collisions between the electrons and gas flowing out of the manifold outputs.
REFERENCES:
patent: 3830721 (1974-08-01), Gruen
patent: 4166018 (1979-08-01), Chapin
patent: 4802968 (1989-02-01), Hendrix
patent: 4849087 (1989-07-01), Meyer
patent: 4946576 (1990-08-01), Dietrich
patent: 5039376 (1991-08-01), Zukotynski
patent: 5108574 (1992-04-01), Kirs
patent: 5223111 (1993-06-01), Lueft
patent: 5322605 (1994-06-01), Yamanishi
patent: 5334302 (1994-08-01), Kubo
patent: 5384021 (1995-01-01), Thwaites
patent: 5403458 (1995-04-01), Hartig
patent: 5616225 (1997-04-01), Sieck
patent: 5622606 (1997-04-01), Kugler
patent: 5662784 (1997-09-01), Schuhmacher
patent: 5733418 (1998-03-01), Hershcovitch
patent: 5747362 (1998-05-01), Visser
patent: 5855745 (1999-01-01), Manley
patent: 5897753 (1999-04-01), Schatz
patent: 6116185 (2000-09-01), Rietzel et al.
patent: 6153067 (2000-11-01), Maishev
patent: 6238526 (2001-05-01), Maishev et al.
patent: 6246059 (2001-06-01), Maishev
patent: 6446572 (2002-09-01), Brcka
patent: 6458253 (2002-10-01), Ando
patent: 6495000 (2002-12-01), Atkinson
patent: 6504294 (2003-01-01), Mahoney
patent: 6710524 (2004-03-01), Gibson
patent: 6819053 (2004-11-01), Johnson
patent: 6988463 (2006-01-01), Veerasamy
patent: 7166199 (2007-01-01), Hartig
patent: 2004/0118678 (2004-06-01), Hartig
patent: 2005/0103620 (2005-05-01), Chistyakov
patent: 2005/0211544 (2005-09-01), Reiter
patent: 4412541 (1994-10-01), None
patent: 0413291 (1991-02-01), None
patent: 0674337 (1995-09-01), None
patent: 2145741 (1985-04-01), None
patent: WO 99/65057 (1999-12-01), None
McClenahan et al., “Production of Thin Film by Controlled Deposition of Sputtered Materials” Topics in Applied Physics 64, pp. 338-377, 1991.
Blondeel et al., “Controlled Reactive Sputter Deposition in DC Mode: an Alternative for Switching”, Society of Vacuum Coaters, 2002, pp. 23-26.
Milde et al., “Gas Inlet Systems for Large Area Linear Magnetron Sputtering Sources”, Society of Vacuum Coaters, 2001, pp. 205-209.
Cardinal CG Company
Fredrikson & Byron , P.A.
McDonald Rodney G
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