Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2007-12-25
2007-12-25
Parekh, Nitin (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S701000, C257S774000, C257SE23011
Reexamination Certificate
active
11161285
ABSTRACT:
A circuit board comprises a resin-filled plated (RFP) through-hole; a dielectric layer over the RFP through-hole; a substantially circular RFP cap in the dielectric layer and connected to an upper opening of the RFP through-hole; a via stack in the dielectric layer; and a plurality of via lands extending radially outward from the via stack, wherein each of the plurality of via lands is diametrically larger than the RFP cap. Preferably, the RFP cap comprises a diameter of at least 300 μm. Preferably, each of the via lands comprises a substantially circular shape having a diameter of at least 400 μm. Moreover, the circuit board further comprises a ball grid array pad connected to the via stack; and input/output ball grid array pads connected to the ball grid array pad. Additionally, the circuit board further comprises metal planes in the dielectric layer.
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Audet Jean J.
Casey Jon A.
Guerin Luc
Questad David L.
Russell David J.
Gibb & Rahman, LLC
International Business Machines - Corporation
Parekh Nitin
Petrokaitis, Esq. Joseph
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