Enhanced stripping of low-k films using downstream gas mixing

Details Enhanced stripping of low-k films using downstream gas mixing Enhanced stripping of low-k films using downstream gas mixing

2007-04-10

2007-04-10

Norton, Nadine (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000, C438S712000, C438S723000, C438S725000, C156S345100

Reexamination Certificate

active

11011273

ABSTRACT:
The present invention pertains to methods for removing unwanted material from a work piece. More specifically, the invention pertains to stripping photo-resist material and removing etch-related residues from a semiconductor wafer during semiconductor manufacturing. Methods involve implementing a hydrogen plasma operation with downstream mixing with an inert gas. The invention is effective at stripping photo-resist and removing residues from low-k dielectric material used in Damascene devices.

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