Enhanced stress-retention silicon-on-insulator devices and...

Details Enhanced stress-retention silicon-on-insulator devices and... Enhanced stress-retention silicon-on-insulator devices and...

2008-05-07

2010-06-15

Dickey, Thomas L (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S151000, C257SE21424

Reexamination Certificate

active

07737498

ABSTRACT:
Field effect transistor and methods of fabricating field effect transistors. The field effect transistors includes: a semiconductor substrate; a silicon oxide layer on the substrate; a stiffening layer on the silicon oxide layer; a single crystal silicon layer on the stiffening layer; a source and a drain on opposite sides of a channel region of the silicon layer; a gate electrode over the channel region and a gate dielectric between the gate electrode and the channel region.

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