Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-09-30
2011-12-27
Dang, Trung Q (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29264, C257SE21421, C438S283000
Reexamination Certificate
active
08084822
ABSTRACT:
Fin-FETS and methods of fabricating fin-FETs. The methods include: providing substrate comprising a silicon oxide layer on a top surface of a semiconductor substrate, a stiffening layer on a top surface of the silicon oxide layer, and a single crystal silicon layer on a top surface of the stiffening layer; forming a fin from the single crystal silicon layer; forming a source and a drain in the fin and on opposite sides of a channel region of the fin; forming a gate dielectric layer on at least one surface of the fin in the channel region; and forming a gate electrode on the gate dielectric layer.
REFERENCES:
patent: 5442223 (1995-08-01), Fujii
patent: 6566712 (2003-05-01), Hayashi et al.
patent: 6621131 (2003-09-01), Murthy et al.
patent: 6707106 (2004-03-01), Wristers et al.
patent: 6717216 (2004-04-01), Doris et al.
patent: 6917078 (2005-07-01), Bhattacharyya
patent: 7276406 (2007-10-01), Chen et al.
patent: 7504678 (2009-03-01), Chau et al.
patent: 7547637 (2009-06-01), Brask et al.
patent: 2004/0070312 (2004-04-01), Penunuri et al.
patent: 2004/0256647 (2004-12-01), Lee et al.
patent: 2005/0247986 (2005-11-01), Ko et al.
patent: 2006/0189053 (2006-08-01), Wang et al.
patent: 2011/0079859 (2011-04-01), Oh et al.
patent: 2011/0180851 (2011-07-01), Doyle et al.
Notice of Allowance (Mail Date Feb. 5, 2010) for U.S. Appl. No. 12/116,237, filed May 7, 2008; Confirmation No. 6682.
G.Lehmann, et al, Young's Modulus and Density of Nanocrystalline Cubic Boron Nitride Films Determined by Dispersion of Surface Acoustic Waves, Applied Physics A 74, pp. 41-45, 2002.
G. Este, et al, Stress Control in Reactively Sputtered AIN and TIN Films, J. Vac. Sci. Technol., A 5, (4) pp. 1892-1897, Jul./Aug. 1987.
Chatty Kiran V.
Gauthier Jr. Robert J.
Rankin Jed Hickory
Robison Robert R.
Tonti William Robert
Cain David A.
Dang Trung Q
International Business Machines - Corporation
Schmeiser Olsen & Watts
LandOfFree
Enhanced stress-retention fin-FET devices and methods of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Enhanced stress-retention fin-FET devices and methods of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Enhanced stress-retention fin-FET devices and methods of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4257796