Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-02-20
2007-02-20
Baumeister, B. William (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S341000, C257S492000, C257S493000, C257SE29256
Reexamination Certificate
active
10942318
ABSTRACT:
An HV PMOS device formed on a substrate having an HV well of a first polarity type formed in an epitaxial layer of a second polarity type includes a pair of field oxide regions on the substrate and at least partially over the HV well. Insulated gates are formed on the substrate between the field oxide regions. Stacked hetero-doping rims are formed in the HV well and in self-alignment with outer edges of the gates. A buffer region of the first polarity type is formed in the HV well between and in self-alignment with inner edges of the gates. A drift region of the second polarity type is formed in the buffer region between and in self-alignment with inner edges of the gates. The drift region includes a region having a gradual dopant concentration change, and includes a drain region of the second polarity type.
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Cai Jun
Harley-Stead Michael
Holt Jim G.
Baumeister B. William
Fairchild Semiconductor Corporation
FitzGerald Esq. Thomas R.
Fulk Steven J.
Hiscock & Barclay LLP
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