Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2009-08-06
2011-11-15
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S613000, C257SE23021
Reexamination Certificate
active
08058163
ABSTRACT:
A method and device for enhanced reliability for semiconductor devices using dielectric encasement is disclosed. The method and device are directed to improving the reliability of the solder joint that connects the integrated circuit (IC) chip to the substrate. The method comprises applying a layer of a photoimageable permanent dielectric material to a top surface of the semiconductor device, and patterning the layer of the photoimageable permanent dielectric material to have an opening over each feature. The method further comprises dispensing or stencil printing fluxing material into the permanent dielectric material openings, and applying solder, which contains no flux, to a top surface of the fluxing material. In one or more embodiments, the method further comprises heating the semiconductor device to a reflow temperature appropriate for the reflow of the solder, thereby causing the solder to conform to sidewalls of the permanent dielectric material openings to form a protective seal.
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International Search Report for PCT/US2009/053205.
Burgess Guy F.
Curtis Anthony P.
Johnson Michael E.
Lichtenthal Stuart
Reche John J. H.
Flipchip International, LLC
Ghyka Alexander
Greenberg & Traurig, LLP
Nikmanesh Seavosh
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