Enhanced radiative zone-melting recrystallization method and app

Details Enhanced radiative zone-melting recrystallization method and app Enhanced radiative zone-melting recrystallization method and app

1992-11-24

1994-03-22

Pal, Asok

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156603, 1566161, 15662071, 15662073, 15662075, 156DIG64, C30B 1316

Patent

active

052960897

ABSTRACT:
A method is provided for zone-melting-recrystallization (ZMR) to produce high quality substantially subboundary-free silicon-on-insulator (SOI) thin films by controlled radiant heating of the silicon film. Using this technique, a much wider experimental parameter range which improves the uniformity of the crystalline quality over the entire SOI film is possible.

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