Enhanced programming performance in a nonvolatile memory...

Details Enhanced programming performance in a nonvolatile memory... Enhanced programming performance in a nonvolatile memory...

2008-05-20

2008-05-20

Phan, Trong (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

07376006

ABSTRACT:
A nonvolatile memory cell includes a bipolar programmable storage element operative to store a logic state of the memory cell, and a metal-oxide-semiconductor device including first and second source/drains and a gate. A first terminal of the bipolar programmable storage element is adapted for connection to a first bit line. The first source/drain is connected to a second terminal of the bipolar programmable storage element, the second source/drain is adapted for connection to a second bit line, and the gate is adapted for connection to a word line.

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