Enhanced process and profile simulator algorithms

Details Enhanced process and profile simulator algorithms Enhanced process and profile simulator algorithms

2006-11-21

2006-11-21

Picard, Leo (Department: 2125)

Data processing: generic control systems or specific application

Specific application, apparatus or process

Product assembly or manufacturing

C700S052000, C703S013000, C438S009000, C438S014000, C156S345240

Reexamination Certificate

active

07139632

ABSTRACT:
A method for enhancing a process and profile simulator algorithm predicts the surface profile that a given plasma process will create. An energetic particle is first tracked. The ion fluxes produced by the energetic particle are then recorded. A local etch rate and a local deposition rate are computed from neutral fluxes, surface chemical coverage, and surface material type that are solved simultaneously.

REFERENCES:
patent: 4663513 (1987-05-01), Webber
patent: 5107105 (1992-04-01), Isobe
patent: 5225740 (1993-07-01), Ohkawa
patent: 5270222 (1993-12-01), Moslehi
patent: 5290382 (1994-03-01), Zarowin et al.
patent: 5399229 (1995-03-01), Stefani et al.
patent: 5422139 (1995-06-01), Fischer
patent: 5642296 (1997-06-01), Saxena
patent: 5654903 (1997-08-01), Reitman et al.
patent: 5679599 (1997-10-01), Mehta
patent: 5711843 (1998-01-01), Jahns
patent: 5737496 (1998-04-01), Frye et al.
patent: 5819073 (1998-10-01), Nakamura
patent: 5861752 (1999-01-01), Klick
patent: 5866437 (1999-02-01), Chen et al.
patent: 5869402 (1999-02-01), Harafuji et al.
patent: 5871805 (1999-02-01), Lemelson
patent: 5900633 (1999-05-01), Solomon et al.
patent: 5933345 (1999-08-01), Martin et al.
patent: 5949678 (1999-09-01), Wold et al.
patent: 5963710 (1999-10-01), Masumoto
patent: 5966312 (1999-10-01), Chen
patent: 5966527 (1999-10-01), Krivokapic et al.
patent: 6041734 (2000-03-01), Raoux et al.
patent: 6110214 (2000-08-01), Klimasauskas
patent: 6136388 (2000-10-01), Raoux et al.
patent: 6151532 (2000-11-01), Barone et al.
patent: 6162709 (2000-12-01), Raoux et al.
patent: 6301510 (2001-10-01), Cooperberg et al.
patent: 6577915 (2003-06-01), Cooperberg et al.
patent: 6804572 (2004-10-01), Cooperberg et al.
patent: 6830650 (2004-12-01), Roche et al.
patent: 2004/0107906 (2004-06-01), Collins et al.
patent: 0 602 855 (1993-03-01), None
Bailey et al., “Scaling of Si and GaAs trench etch rates with aspect ratio, feature width, and substrate temperature”, Jan. Feb. 1995, J. Vac. Sci. Technol., B, vol. 13, No. 1, pp. 92-104.
Barone et al., “Molecular dynamics simulations of plasma-surface chemistry”, 1996, Plasma Sources Sci. Technol. 5, pp. 187-192.
Chang et al., “Plasma-surface kinetics and feature profile evolution in chlorine etching of polysilicon”, Jan./Feb. 1998, J. Vac. Sci. Technol. A, vol. 16, No. 1, pp. 217-224.
Gottscho et al., “Microscopic uniformity in plasma etching”, Sep./Oct. 1992, J. Vac. Sci. Technol. B, vol. 10, No. 5, pp. 2133-2147.
Hamaguchi et al., “Liner conformality in ionized magnetron sputter metal deposition processes”, Jul./Aug. 1996, J. Vac. Sci. Technol. B, vol. 14, No. 4, pp. 2603-2608.
Hamaguchi, S., “Mathematical Methods for Thin Film Deposition Simulations”, 1996, Thin Films, vol. 22, pp. 81-115.
Han et al., “Profile modeling of high density plasma oxide etching”, Jul./Aug. 1995, J. Vac. Sci. Technol. B, vol. 13, No. 4, pp. 1893-1899.
Li et al., “Simulation and Experimental Analysis of Planarization of Refractory Metals Using a Multi-Step Sputter/Sputter Etch Process”, 1994, Journal of Electronic Materials, vol. 23, No. 11, pp. 1215-1220.
Liao et al., “Simulations of metal thin film thermal flow processes”, Jul./Aug. 1996, J. Vac. Sci. Technol. B, vol. 14, No. 4, pp. 2615-2622.
Moyne et al., “Adaptive extensions to a multibranch run-to-run controller for plasma etching”, May/Jun. 1995, J. Vac. Sci. Technol. A, vol. 13, No. 3, pp. 1787-1791.
Reitman, Edward A., “Neural networks in plasma processing”, Jan./Feb. 1996, J. Vac. Sci. Technol. B, vol. 14, No. 1, pp. 504-510.
Singh et al., “The effect of surface transport on the evolution of film microstructure in plasma etching and deposition”, 1997, Microelectronic Engineering 35, pp. 37-40.
Thallikar et al., “Experimental and simulation studies of thermal flow of borophosphosilicate and phosphosilicate glasses”, Jul./Aug. 1995, J. Vac. Sci. Technol. B, vol. 13, No. 4, pp. 1875-1878.
Vahedi et al., “Capacitive RF discharges modelled by particle-in-cell Monte Carlo simulation. I: analysis of numerical techniques”, 1993, Plasma Sources Sci. Technol. 2, pp. 261-272.
Vahedi et al., “Capacitive RF discharges modelled by particle-in-cell Monte Carlo simulation. II: comparisons with laboratory measurements of electron energy distribution functions”, 1993, Plasma Sources Sci. Technol. 2, pp. 273-278.

Affiliated with

Also associated with

Rating

Enhanced process and profile simulator algorithms does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Enhanced process and profile simulator algorithms, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Enhanced process and profile simulator algorithms will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3648890