Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-11
2007-09-11
Chaudhari, Chandra (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S255000, C257SE29020, C257SE29255, C438S198000, C438S221000
Reexamination Certificate
active
10930638
ABSTRACT:
In the present invention, a PMOS device comprises a channel region formed in {100} silicon with first and second source/drain region disposed on either side of the channel region. The channel region is oriented such that a current flow between the source/drain regions has a <100> direction through the channel region. Dielectric regions create a compressive stress on the channel region perpendicular to the current flow.
REFERENCES:
patent: 5970330 (1999-10-01), Buynoski
patent: 6211064 (2001-04-01), Lee
patent: 6657276 (2003-12-01), Karlsson et al.
patent: 6870179 (2005-03-01), Shaheed et al.
patent: 6876053 (2005-04-01), Ma et al.
patent: 6884667 (2005-04-01), Doris et al.
patent: 6974738 (2005-12-01), Hareland et al.
patent: 7001844 (2006-02-01), Chakravarti et al.
patent: 2002/0063292 (2002-05-01), Armstrong et al.
patent: 2004/0113174 (2004-06-01), Chidambarrao et al.
patent: 2005/0093078 (2005-05-01), Chan et al.
patent: 2005/0184345 (2005-08-01), Lin et al.
patent: 2005/0224798 (2005-10-01), Buss
patent: 2005/0255667 (2005-11-01), Arghavani et al.
patent: 2006/0043500 (2006-03-01), Chen et al.
patent: 2006/0043579 (2006-03-01), He et al.
S. Wolf, “Silicon Processing for the VLSI Era: Process Technology,” vol. 1, 1986, pp. 1-6.
Bowen Robert C.
Wang Yuguo
Brady III W. James
Chaudhari Chandra
Fulk Steven J.
McLarty Peter K.
Telecky , Jr. Frederick J.
LandOfFree
Enhanced PMOS via transverse stress does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Enhanced PMOS via transverse stress, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Enhanced PMOS via transverse stress will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3774740