Enhanced plasma etching

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

156646, 156668, H01L 2100

Patent

active

049851128

ABSTRACT:
Increased etching rates are obtained by plasma etching wherein the power is applied in a cyclical or oscillating mode.

REFERENCES:
patent: 3677799 (1972-07-01), Hou
patent: 4263088 (1981-04-01), Gorin
patent: 4357195 (1982-11-01), Gorin
patent: 4357203 (1982-11-01), Zelez
patent: 4401507 (1983-08-01), Engle
patent: 4500563 (1985-11-01), Ellenberger et al.
patent: 4568563 (1986-02-01), Jackson et al.
patent: 4579618 (1986-04-01), Celestino et al.
patent: 4585516 (1986-04-01), Corn et al.
patent: 4602981 (1986-07-01), Chem et al.
patent: 4609428 (1986-09-01), Fujimura
patent: 4617079 (1986-10-01), Tracy et al.
patent: 4626315 (1986-12-01), Kitamoto et al.
Boswell, et al., Applied Physics Letters, "Pulsed High Rate Plasma Etching With Variable Si/SiO.sub.2 Selectivity and Variable Si Etch Profiles", 47 (1985) Nov., No. 1o.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Enhanced plasma etching does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Enhanced plasma etching, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Enhanced plasma etching will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-53389

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.