Etching a substrate: processes – Forming or treating electrical conductor article – Forming or treating of groove or through hole
Patent
1993-12-06
1995-07-25
Dang, Thi
Etching a substrate: processes
Forming or treating electrical conductor article
Forming or treating of groove or through hole
437228, 437231, 437235, 437238, 216 80, 216 97, H01L 2100
Patent
active
054358884
ABSTRACT:
A method for planarizing integrated circuit topographies, wherein, after a first layer of spin-on glass is deposited, a layer of low-temperature oxide is deposited before a second layer of spin-on glass.
REFERENCES:
patent: 4721548 (1988-01-01), Morimoto
patent: 4801560 (1989-01-01), Wood et al.
patent: 4894351 (1990-01-01), Batty
patent: 4986878 (1991-01-01), Malazgirt et al.
patent: 5003062 (1991-03-01), Yen
patent: 5110763 (1992-05-01), Matsumoto
patent: 5244841 (1993-09-01), Marks et al.
patent: 5250472 (1993-10-01), Chen et al.
patent: 5266525 (1993-11-01), Morozumi
patent: 5310720 (1994-05-01), Shin et al.
patent: 5320983 (1994-06-01), Ouellet
Kalnitsky Alex
Lin Yih-Shung
Dang Thi
Groover Robert
Jorgenson Lisa K.
Robinson Richard K.
SGS-Thomson Microelectronics Inc.
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