Enhanced planarization technique for an integrated circuit

Etching a substrate: processes – Forming or treating electrical conductor article – Forming or treating of groove or through hole

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437228, 437231, 437235, 437238, 216 80, 216 97, H01L 2100

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active

054358884

ABSTRACT:
A method for planarizing integrated circuit topographies, wherein, after a first layer of spin-on glass is deposited, a layer of low-temperature oxide is deposited before a second layer of spin-on glass.

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