Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-11-14
1999-06-15
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257346, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
059124938
ABSTRACT:
A method for forming a semiconductor device to produce graded doping in the source region and the drain region includes the steps of forming a gate on the surface of the substrate separated from the substrate by a gate oxide, and applying a first ion implantation to implant lightly doped source and drain regions into the substrate, and implanting a material to a portion of the gate oxide over the source region and a portion of the gate oxide over the drain region to vary the rate of oxide formation. An oxide layer is then formed. The resulting oxide layer has at least two thicknesses. Another ion implantation is applied through the formed oxide layer. The ion implantation converts a portion of the lightly doped source region into a heavily doped source region, and converts a portion of the lightly doped drain region into a heavily doped drain region. The implanted ions travel a set distance through the oxide layer formed and into the substrate and more specifically into the source and drain regions formed in the substrate. Therefore, the geometry of the interface between the lightly doped region and the heavily doped region in the source region and the drain region depends on the geometry (thickness and pattern) of oxide layer formed. A set of spacers can also be added after lightly doping the substrate to form the Ldd source and Ldd drain. The geometry of the spacers will also then effect the geometry of the interface between the lightly doped and heavily doped regions within the source and the drain. Also disclosed is a device made by this process as well as an information handling system including such a device.
REFERENCES:
patent: 4928163 (1990-05-01), Yoshida et al.
Gardner Mark I.
Hause Fred N.
May Charles E.
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