Enhanced MRAM reference bit programming structure

Details Enhanced MRAM reference bit programming structure Enhanced MRAM reference bit programming structure

2006-01-19

2008-08-12

Ho, Hoai V. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S173000, C365S210130, C257S422000

Reexamination Certificate

active

07411816

ABSTRACT:
An MRAM circuit includes an MRAM array having a plurality of operational MRAM elements and a reference cell made up of one or more reference MRAM elements. A plurality of program lines within a first region are cladded with a flux-concentrating layer configured to focus a generated magnetic field while the portions of the program lines within a second region are uncladded so that the generated magnetic field is unfocused. Generally, the first region is associated with the operational MRAM elements and the second region is associated with the reference cell.

REFERENCES:
patent: 6055178 (2000-04-01), Naji
patent: 6720597 (2004-04-01), Janesky et al.
patent: 6740947 (2004-05-01), Bhattacharyya et al.
patent: 6791872 (2004-09-01), Bloomquist et al.
patent: 6803274 (2004-10-01), Sharma et al.
patent: 6885074 (2005-04-01), Durlam et al.
patent: 6927072 (2005-08-01), Molla et al.
patent: 7009874 (2006-03-01), Deak
patent: 2006/0023494 (2006-02-01), Jeong et al.
patent: 2007/0030723 (2007-02-01), Chen et al.
Durlam et al., “A Low Power 1Mbit MRAM Based on 1T1MTJ Bit Cell Integrated with Copper Interconnects,” Motorola Labs and Motorola Semiconductor Products Sector, To be published at VLSI Symposium 2002.
Park, M.H. et al., “Magnetic Element Shape for Magnetic Random Access Memory (MRAM)”, 11thAnnual NASA Symposium on VLSI Design, May 28-29 (2003), Moscow, Idaho, USA.

Affiliated with

Also associated with

Rating

Enhanced MRAM reference bit programming structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Enhanced MRAM reference bit programming structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Enhanced MRAM reference bit programming structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4017912