Enhanced mobility metal oxide semiconductor devices

Details Enhanced mobility metal oxide semiconductor devices Enhanced mobility metal oxide semiconductor devices

1991-12-06

1994-09-27

Larkins, William D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257194, 257656, H01L 2972

Patent

active

053509404

ABSTRACT:
This invention relates to a process for fabricating a metal-oxide-semiconductor device and to the semiconductor device which has enhanced charge mobility due to the inclusion of a thin layer of intrinsic semiconductor which provides a "fast track" charge channel directly at the accumulated inversion layer. The particular semiconductor device described is the enhanced mobility metal-oxide-semiconductor field effect transistor EMMOSFET having the intrinsic layer from about 100 .ANG. to about 1000 .ANG. thick. The intrinsic layer provides a low resistivity channel between the source and drain of the EMMOSFET resulting in an increase in device speed and a decrease in device heat generation.

REFERENCES:
patent: 4242691 (1980-12-01), Kotani et al.
patent: 4755857 (1988-07-01), Abstreiter et al.
Nishizawa et al, IEEE J. of Solid State Circuits, vol. SC-15, No. 4, Aug. 1980, pp. 705-715.
Konaka et al, Proc. 10th Conference on Solid State Devices, Tokyo, 1978, Japan J. Applied Physics vol. 18, Suppl 18-1, 1979, pp. 27-33.

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