Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-06-07
2011-06-07
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S664000, C257SE21199, C257SE21296
Reexamination Certificate
active
07955978
ABSTRACT:
Silicon containing substrates are coated with nickel. The nickel is coated with a protective layer and the combination is heated to a sufficient temperature to form nickel silicide. The nickel silicide formation may be performed in oxygen containing environments.
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Foggiato et al.; “Optimizing the formation of nickel silicide”;.Materials Science and Engineering B 114-115 (2004), pp. 56-60.
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Allardyce George R.
Cahalen John P.
Hamm Gary
Jacques David L.
Jefferson Quovaunda
Piskorski John J.
Rohm and Hass Electronic Materials LLC
Smith Matthew
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