Enhanced metal etch process

Details Enhanced metal etch process Enhanced metal etch process

1994-09-12

1996-12-10

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566461, 216 77, H01L 21336

Patent

active

055826792

ABSTRACT:
A method for dry etching metal films, specifically aluminum, is described. This process uses photoresist as a mask with a gas mixture of BCl3, Cl2 and N2 used for the RIE. The addition of specific amounts of N2 to the etching chemistry results in non-tapered or non-undercut aluminum shapes. These desired shapes are attributed to the creation of polymer on the sidewall of the aluminum during the etching procedure, thus protecting against the isotropic components of RIE process, which cause the tapering. This RIE process can also be conducted at high enough temperatures, needed to avoid deleterious microloading effects.

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patent: 4592800 (1986-06-01), Landau et al.
patent: 4863561 (1989-09-01), Freeman et al.
patent: 5211804 (1993-05-01), Kobayashi
patent: 5350488 (1994-09-01), Webb
patent: 5397433 (1995-03-01), Gabriel
"Tapered Aluminum Interconnect Etch"; Allen et al., J. Vac. Sci; 12 (4, Pt. 1); pp. 1265-1268; Aug. 1994.
"Electron Cyclotron Resonance Etching of Aluminum Alloys With Boron Trichloride-Chlorine-Nitrogen", Marx et al.; 1992; J. Vac. Sci. Techn. 10(4, Pt. 1); pp. 1232-1237.

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