Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
1998-06-22
2001-07-17
Lee, Eddie (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S295000, C257S310000, C438S003000
Reexamination Certificate
active
06262462
ABSTRACT:
FIELD OF THE INVENTION
The present invention pertains to field effect transistors with insulated gates and more specifically to methods of forming the insulated gates with enhanced dielectric constant material.
BACKGROUND OF THE INVENTION
Field effect transistors (FETs) with insulated gates are in great use in the industry because of the low power consumed in the OFF state and because of the ease of manufacturing these devices in integrated circuits. However, as the size of the devices, and especially the gates, decreases to reduce the size of the device (to improve density) and to increase frequency response, the characteristics of the devices are harder to maintain. Specifically, as the gate insulating layer is reduced in size, leakage current increases, breakdown voltage decreases, and/or the ON resistance increases.
Thus, it would be highly advantageous to provide FETs that overcome these problems.
It is a purpose of the present invention to provide a new method of manufacturing enhanced dielectric constant dielectric material for FET gates.
It is another purpose of the present invention to provide a new method of fabricating dielectric material with lateral strain that increases the dielectric constant.
It is still another purpose of the present invention to provide a new method of fabricating a high dielectric constant (CaSr)TiO
3
on a silicon substrate in a FET gate.
It is a further purpose of the present invention to provide a new and improved enhanced dielectric constant dielectric material in a FET gate.
It is still a further purpose of the present invention to provide a new and improved high dielectric constant (CaSr)TiO
3
epitaxially grown on a silicon substrate in a FET gate.
SUMMARY OF THE INVENTION
The above problems and others are at least partially solved and the above purposes and others are realized in a field effect transistor with an enhanced dielectric constant gate insulator and methods of fabrication. The transistor includes spaced apart source and drain terminals positioned on a substrate structure so as to define a gate area therebetween. A layer of laterally strained (i.e. parallel to the surface of the substrate structure), enhanced dielectric constant dielectric material is epitaxially grown on the substrate structure in the gate area, and a gate metal is positioned on the layer of dielectric material to form a gate terminal in the gate area.
The dielectric constant of the dielectric material is, for example, increased by adjusting the stoichiometry of the layer of dielectric material during epitaxial growth of the dielectric material to provide the lateral strain. In a specific example, a silicon substrate is provided and a layer of (CaSr)TiO
3
is epitaxially grown on the surface.
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Choi et al., Study on the Dielectric Properties of (SrCa)TiO3 based Ceramics for the Capacitor Materials, IEEE Proceedings of the 5th International Conference on Properties and Applications of Dielectric Materials, pp. 900-902, May 1997.*
Choi et al., Dielectric Properties and Microstructure of (SrCa)TiO3 based Boundary Layer Capacitor Materials, IEEE Proceedings of the 4th International Conference on Properties and Applications of Dielectric Materials, pp. 286-289, Jul. 1994.
Hallmark Jerald A.
Marshall Daniel S.
Ooms William J.
Eckert II George C.
Koch William E.
Lee Eddie
Motorola Inc.
Parsons Eugene A.
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