Enhanced deep trench storage node capacitance for DRAM

Details Enhanced deep trench storage node capacitance for DRAM Enhanced deep trench storage node capacitance for DRAM

1995-10-05

1997-01-07

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Capacitors

437 52, 257301, 257532, G11C 1124, H01L 2170, H01L 27108, H01L 2900

Patent

active

055924123

ABSTRACT:
A capacitance storage trench for a DRAM cell includes a trench having at least one sidewall, a bottom wall and a plurality of rods extending away from the bottom wall. The at least one sidewall, the bottom wall and the rods are coated with a capacitive dielectric layer. A layer of semiconductive material is disposed over the dielectric layer. The plurality of rods expand the overall surface area of the trench and thus, provide a significant increase in capacitance storage of the storage trench. The capacitance storage trench is formed in a method which includes the steps of forming a plurality of buried oxygen precipitates in a selected region of a substrate and using the oxygen precipitates as micromasks during a conventional trench etch process.

REFERENCES:
patent: 4864464 (1989-09-01), Gonzalez
patent: 4987470 (1991-01-01), Suzuki et al.
patent: 5028980 (1991-07-01), Teng
patent: 5093702 (1992-03-01), Kim
patent: 5102819 (1992-04-01), Matsushita et al.
patent: 5386131 (1995-01-01), Sato

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