Enhanced CVD copper adhesion by two-step deposition process

Details Enhanced CVD copper adhesion by two-step deposition process Enhanced CVD copper adhesion by two-step deposition process

1998-07-24

1999-09-07

Talbot, Brian K.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427124, 427250, 4272557, B05D 512

Patent

active

059484675

ABSTRACT:
A method of enhancing copper adhesion to a substrate includes preparing a single-crystal silicon substrate; forming integrated circuit components on active areas of the substrate; metallizing the integrated circuit components, including metallizing a first copper layer by low-rate CVD, and metallizing a second copper layer by high-rate CVD; and finalizing construction of the structure.

REFERENCES:
N. Awaya et al., Evaluation of Copper Metallization Process and the Electrical Characteristics of Copper Interconnected Quarter-Micron CMOS, IEEE Trans. Electron Dev. 43 (1996) p.1206.

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