Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Patent
1995-03-29
1997-04-29
Wilczewski, Mary
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
438764, H01L 2126, H01L 21324
Patent
active
056248733
ABSTRACT:
A fabrication process for rendering, for example, amorphous silicon (a-Si) films into polycrystalline silicon (poly-Si) films initially commences with the deposition of the a-Si film on a substrate such as glass. The a-Si film is then exposed to a particle flux (e.g. a plasma or a neutral beam). The resulting treatment apparently causes an action that enhances a subsequent crystallization process. The treatment occurs at a temperature well below any level which causes a change in the substrate. The particle flux treatment is followed by an anneal step that enables a rapid crystallization. By appropriate masking prior to the treatment, crystallization in non-treated areas is prevented while crystallization in treated areas occurs during the anneal procedure.
REFERENCES:
patent: 4151058 (1979-04-01), Kaplan et al.
patent: 4727044 (1988-02-01), Yamazaki
patent: 5147826 (1992-09-01), Liu et al.
patent: 5246886 (1993-09-01), Sakai et al.
patent: 5254484 (1993-10-01), Hefner et al.
patent: 5275851 (1994-01-01), Fonash et al.
patent: 5288658 (1994-02-01), Ishihara
patent: 5387542 (1995-02-01), Yamamoto et al.
patent: 5403772 (1995-04-01), Zhang et al.
Gat et al. "Annealing of Ion-Implanted Si Using A Scanned CW Laser System", Radiation Effects, 1980, vol. 48, pp. 195-202 1980.
"Examination of the Optimization of Thin Film Transistor Passivation with Hydrogen Electron Cyclotron Resonance Plasmas", R.A. Ditzio et al., J. Vac. Sci. Tech. A 10(1), Jan./Feb. 1992, pp. 59-65.
"Low-Temperature Polycrystalline-Silicon TFT on 7059 Glass", W. Czubatyj et al., IEEE Electron Device Letters, vol. 10, No. 8, Aug. 1989, pp. 349-351.
"Low Thermal Budget Poly-Si Thin Film Transistors on Glass", G. Liu, vol. 30, No. 2B, Feb. 1991, pp. L269-L271.
Fonash Stephen J.
Yin Aiguo
Monahan Thomas J.
The Penn State Research Foundation
Wilczewski Mary
LandOfFree
Enhanced crystallization of amorphous films does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Enhanced crystallization of amorphous films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Enhanced crystallization of amorphous films will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-705419